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The eGaN FET includes an internal diode and has a large forward drop that can limit the overvoltage, but all of the charging must occur during the.

EPC introduces 170V, 6.8milliohm EPC2059 eGaN® FET, offering designers a device that is smaller, more efficient, more reliable, and lower cost than currently available devices for high performance 48V synchronous rectification.

Efficient Power Conversion (EPC) advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of the EPC2059 (6.8 mΩ, 170 V) eGaN FET. This device is the latest in a family of 100 V – 200 V solutions suitable for a wide-range of power levels and price points. They are designed to meet the increasing demands of 48 V – 56 V server and data center products as well as an array of consumer power supply applications for high end computing, including gaming PCs, LCD/LED TVs, and LED lighting.

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The EPC2059 is ideal for DC-DC secondary-side synchronous rectification in AC/DC adaptors, fast chargers, and power supplies with power ranges between 100 W and 6 kW. The performance advantage of gallium nitride devices helps designers achieve the demanding efficiency requirements for 80 Plus Titanium power supplies, while providing smaller, faster, cooler, and lighter systems with lower system costs then currently available solutions.

The purpose of this development board is to simplify the evaluation process of the EPC2045 eGaN FET by including all the critical components on a. The 40 V, 10 A FET EPC21603 laser driver is capable of very high frequencies exceeding 100 MHz and super short pulses (eGaN FET uses EPC’s proprietary GaN IC technology in a chip-scale BGA form factor. ディスクリート半導体製品 - トランジスタ - FET、MOSFET - シングル はDigiKeyに在庫があります。ご注文は今すぐ!.

Development Board

The EPC9098 development board is a 170 V maximum device voltage, 25 A maximum output current, half bridge with onboard gate drives, featuring the EPC2059 eGaN FETs. This 2” × 2” (50.8 mm × 50.8 mm) board is designed for optimal switching performance and contains all critical components for easy evaluation of the EPC2059.

The EPC9098 development board.

Price and Availability

GaN Application Demo 3: EGaN FETs For LiDAR (Light Distancing And Ranging)

The EPC2059 is priced at $1.59 each in 2.5Ku volumes.

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Actingcomedy mac. The EPC9098 development board is price at $123.75 each.

EPC announces the introduction of a laser driver that integrates a 40 V,10 A FET with a gate driver and low-voltage differential signaling (LVDS) logic level input in a single chip for time-of-flight lidar systems used in robotics, drones, augmented reality, and gaming applications.

The EPC21603 is a laser driver that is controlled using LVDS logic and is capable of very high frequencies exceeding 100 MHz and super short pulses (< 2 ns) to modulate laser driving currents up to 10 A. The EPC21603 is a single-chip driver plus eGaN FET using EPC’s proprietary GaN IC technology in a chip-scale BGA form factor that measures only 1.5 mm x 1.0 mm. The LVDS logic control allows the eToF laser driver IC to be controlled from an FPGA for applications where noise immunity is critical, such as augmented reality.

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Integrated devices in a single chip make it easier to design, easier to layout, easier to assemble, save space on the PCB, increase efficiency, and reduce cost. This family of products will enable faster adoption and increased the ubiquity of ToF solutions across a more comprehensive array of end-user applications.

The EPC9156 development board features the EPC21603 eToF laser driver IC and is primarily intended to drive laser diodes with short, high current pulses. Capabilities include minimum pulse widths of < 2 ns, 10 A peak currents, and bus voltage rating of 30 V.

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The EPC21603 eToF laser drive IC is priced at less than $1.00 at 500 Ku.
The EPC9156 development board is priced at $465.23 each.

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